infrared emitting diode, rohs compliant, 875 nm, gaalas www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81045 252 rev. 1.7, 04-sep-08 tsTA7300 vishay semiconductors description tsTA7300 is an infrared, 875 nm emitting diode in gaalas technology in a hermetically sealed to-18 package with lens. features ? package type: leaded ? package form: to-18 ? dimensions (in mm): ? 4.7 ? peak wavelength: p = 875 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 12 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? radiation source near infrared range note test conditions see tabl e ?basic char acteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 642 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) tsTA7300 20 12 875 600 ordering information ordering code packaging remarks package form tsTA7300 bulk moq: 1000 pcs, 1000 pcs/bulk to-18 absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p 100 s i fm 200 ma surge forward current t p 100 s i fsm 2.5 a power dissipation p v 180 mw t case 25 c p v 500 mw junction temperature t j 100 c storage temperature range t stg - 55 to + 100 c thermal resistance junction/ambient leads not soldered r thja 450 k/w thermal resistance junction/case leads not soldered r thjc 150 k/w
document number: 81045 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.7, 04-sep-08 253 tsTA7300 infrared emitting diode, rohs compliant, 875 nm, gaalas vishay semiconductors fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward cu rrent limit vs. ambient temperature note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse durati on fig. 4 - forward current vs. forward voltage 0 200 400 600 12790 r thja 100 300 500 r thjc t am b - am b ient temperat u re (c) 50 125 100 75 25 0 p - po w er dissipation (m w ) v 0 25 50 75 100 125 94 7971 r thja r thjc t am b - am b ient temperat u re (c) 40 100 8 0 60 20 0 i - for w ard c u rrent (ma) f basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p 20 ms v f 1.4 1.8 v breakdown voltage i r = 100 a v (br) 5v junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 20 pf radiant intensity i f = 100 ma, t p 20 ms i e 10 20 50 mw/sr radiant power i f = 100 ma, t p 20 ms e 10 mw temperature coefficient of e i f = 100 ma tk e - 0.7 %/k angle of half intensity ? 12 deg peak wavelength i f = 100 ma p 875 nm spectral bandwidth i f = 100 ma ? 80 nm rise time i f = 100 ma t r 600 ns i f = 1.5 a, t p /t = 0.01, t p 10 s t r 300 ns virtual source diameter d 1 mm t p - p u lse d u ration (ms) 94 8 003 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 t p /t= 0.01 i fsm = 2.5 a (single pa u se) 0.05 0.1 0.2 0.5 i - for w ard c u rrent (a) f v f - for w ard v oltage ( v ) 94 8 005 10 1 10 2 10 3 10 4 t p = 100 s t p /t= 0.001 4 3 2 1 0 i - for w ard c u rrent (ma) f
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81045 254 rev. 1.7, 04-sep-08 tsTA7300 vishay semiconductors infrared emitting diode, rohs compliant, 875 nm, gaalas fig. 5 - relative forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current fig. 7 - radiant power vs. forward current fig. 8 - rel. radiant intensit y/power vs. ambient temperature fig. 9 - relative radiant power vs. wavelength fig. 10 - relative radiant intensity vs. angular displacement 0.7 0. 8 0.9 1.0 1.1 1.2 v f rel - relati v e for w ard v oltage ( v ) 94 7990 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 i f = 10 ma i f - forward current (ma) 94 7974e 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i - radiant intensity (mw/sr) e i f - for w ard c u rrent (ma) 94 7972 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 - radiant po w er (m w ) e 100 - 10 10 50 0 100 0 0.4 0. 8 1.2 1.6 i ; e rel e rel 140 94 8 020 i f = 20 ma t am b - am b ient temperat u re (c) 7 8 0 88 0 - w a v elenght (nm) 9 8 0 94 8 000 - relati v e radiant po w er e 0 0.25 0.5 0.75 1.0 1.25 i f = 100 ma p e e e )/ () ( ) rel = ( 0.4 0.2 0 0.2 0.4 i - relati v e radiant intensity e rel 0.6 94 8 021 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0
document number: 81045 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.7, 04-sep-08 255 tsTA7300 infrared emitting diode, rohs compliant, 875 nm, gaalas vishay semiconductors package dimensions in millimeters a c 2.54 nom. 5.5 0.15 6.15 0.25 13.2 0.7 0.45 + 0.02 - 0.05 4.69 + 0.02 - 0.07 le n s 4 0.05 chip positio n dra w ing- n o.: 6.503-5022.01-4 specifications according to di n technical dra w ings (2.5) iss u e: 2; 24.0 8 .9 8 96 12179
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